| 摘要 |
PROBLEM TO BE SOLVED: To form a thermally stable p-type electrode having a low resistance to achieve a low threshold current and a low operating voltage, prevent the deterioration, and increase the reliability by forming a metal contact layer, a metal barrier layer, and the p-type electrode on a p-type nitride compound semiconductor. SOLUTION: By forming a metal contact layer 10 made of Au or an alloy of Au and another metal on a p-type nitride compound semiconductor layer (GaX1InY1AlZ1: X1+Y1+Z1=1, 1<=X1, Y1, Z1<=1), the barrier is lowered. Moreover, the diffusion of metal from a p-side electrode 12 can be prevented by a metal barrier layer 11, increasing a carrier density on the surface of a p-side GaN contact layer 9, causing applied current to flow smoothly, and reducing a contact resistance. Part of metal in the metal contact layer 10 is diffused by heat treatment into the nitride compound semiconductor and is electrically activated and therefore a high carrier concentration can be expected. |
