GAS-PHASE EPITAXIAL GROWTH METHOD, SEMICONDUCTOR SUBSTRATE, AND MANUFACTURE THEREOF AND HYDRIDE GAS- PHASE EPITAXY DEVICE

摘要

PROBLEM TO BE SOLVED: To lessen the growth rate and accelerate the surface migration of molecules if group III atom, by specifying the relation among the growth rate, the growth pressure, and the layer thickness, when growing a second semiconductor layer in second thickness at second growth rate and growth pressure after growing a first semiconductor layer in first thickness at first growth rate and growth pressure on a substrate. SOLUTION: A thin GaN layer 302 is grown at a growth rate of, for example, 4 μm/h or under by depressurized hydride VPE method on a substrate 301, and then a thick AlGaN layer 304 is grown enough at a growth rate of 4-400 μm/h by normal pressure hydride VPE method on this GaN layer 2. Here, in the gas-phase epitaxial growth method which grows a second semiconductor layer in thickness d3 at growth rate V3 and growth pressure P3 as it is after growing the first semiconductor layer in thickness d2 at growth rate V2 and growth pressure P2 on the substrate, it is so arranged as to fulfill the conditions of V2