发明名称 SUBSTRATE-PROCESSING DEVICE AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide a substrate-processing device and a method, where a substrate can be stably processed and restrained of a processing solution from varying in concentration. SOLUTION: Prior to a replacing operation, an etching solution (second processing solution) is compounded as high in concentration as prescribed in the compounding tank of a compounding section 62 and previously reserved. After a cleaning operation (first substrate processing) is finished, an etching solution (second processing solution) reserved in the compounding tank is supplied to a processing tank 10 to carry out an etching operation. In this way, when an etching solution is compounded in advance, the etching solution can be more easily and accurately controlled in a concentration than an normal case, where an etching solution is successively supplied to a processing tank, since it is compounded in a mixing valve, so that an etching solution supplied to the processing tank 10 can be restrained from varying in concentration.
申请公布号 JP2000223455(A) 申请公布日期 2000.08.11
申请号 JP19990020547 申请日期 1999.01.28
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 UENO TAKASHI
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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