| 摘要 |
PROBLEM TO BE SOLVED: To provide a switch circuit device which can improve electric breakdown power and high output through low-voltage operation. SOLUTION: An FET 10 is connected between a node Pta connected to a terminal ANT and a Ptx connected to a terminal TX and an FET 20 is connected to a node Pra connected to the terminal ANT and a node Prx connected to a terminal RX. An additional capacitor 70 is connected between the gate Prg of the FET 10 and the node Pta. And an additional capacitor 80 is connected between a gate Prg of the FET 20 and the node Pra. Mutually complementary control signals Vc1 and Vc2 are applied to the gates of the FETs 10 and 20. The node Ptx is connected to a bias terminal BT through a large resistor 50 and the node Prx is connected to a bias terminal BR through a large resistor 60. The bias terminals BT and BR are supplied with a high level voltage Vhigh.
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