| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and its manufacture which can reduce the aspect ratio of contact holes and eliminate etching residues formed in level portions in a wiring layer. SOLUTION: In the part of a semiconductor single-crystalline layer on a silicon semiconductor substrate 2, insulating films 4a, 4b for shallow trench isolation(STI) are formed to isolate an element formed region. In the insulating films 4a, 4b, a polycrystalline silicon film (resistor element) 6 and a polycrystalline silicon film (lower electrode of a capacitor) 8, which have their upper end surface at a position lower than that of the single crystalline layer surface 2a of the semiconductor substrate 2, are formed and the surface of the semiconductor substrate 2 including STI is flattened.
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