PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a pattern forming material capable of forming a good pattern in the pattern formation of a semiconductor device. SOLUTION: In a 1st step, a pattern forming material comprising a polymer containing groups which generate an acid when heated and groups which generate a base when irradiated with energy beams is applied on a substrate 1 to form a resist film. In a 2nd step, the resist film is irradiated with energy beams through a mask 3 having the desired pattern shape to generate the base 5 from the polymer in the exposed part of the resist film. In a 3rd step, the resist film is heated to generate the acid 7 from the polymer and the base 5 generated from the polymer in the exposed part of the resist film is neutralized with the acid 7 generated from the polymer. In a 4th step, a mask 3 is formed on the surface of the unexposed part of the resist film. In a 5th step, a resist pattern is formed using the mask 3.