| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for realizing a polycrystalline silicon thin film with a low resistance and thin film thickness at a low temperature and in a short processing time. SOLUTION: A semiconductor device formed by laminating a gate insulating film and a gate electrode on a substrate 101 is manufactured by a process for forming a gate insulating film on the substrate 101, a process for forming an amorphous silicon film 103a on the gate insulating film, a process for introducing medium elements to the amorphous silicon film 103a, and a process for forming a polycrystalline silicon film 103b by heating the amorphous silicon film 103a to which the medium elements are introduced, and crystallizing it.
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