| 摘要 |
The invention concerns a semiconductor device comprising on a substrate: a first MOS transistor (10) with dynamic threshold voltage, with a gate (116), and a channel having one first type of conductivity, and a current limiting element (20) connected between said first transistor gate and channel. The invention is characterised in that said first transistor is provided with a first zone (160) doped with the first type of conductivity, connected to the channel, and the current limiting element comprises a second zone (124) doped with a second type of conductivity and electrically connected to the first zone by an ohmic connection. The invention is useful for producing CMOS circuits.
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