| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, by siliciding not only a gate electrode and source/drain region of MOS but also an electrode region of a bipolar transistor. SOLUTION: A semiconductor device 100 is of a BiCMOS type in which in PMOS and NMOS regions 18 and 20, as in prior art BiCMOS semiconductor device, a P+-region 48 (source/drain region), an N+-region 44 (source/drain region) and a gate electrode 40 are silicided in their surface layers, for example, as a silicide layer 70. In an NPN region 14 of the semiconductor device, surface layers of N+ and P+ regions 24 and 48 are silicided for example, as a silicide layer 70 of CoSi, while surface layers of P+ and N+ regions 32 and 44 are silicided for example, as, a silicide layer 70 of CoSi.
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