| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a means for enhancing a using efficiency of a current capacity of a power source by reducing the number of times of writing in a flash EEPROM(electrically erasable and programmable read only memory) for dividing and writing write data of a multi-bit configuration. SOLUTION: This nonvolatile semiconductor memory comprises a first counter for counting '0' data included in write data, a second counter for counting total bits of the write data, and a circuit for masking another data when the counted value of the first counter becomes a predetermined value. A function of deciding dividing and writing ranges are provided by aiming at number of the '0' data to be actually written of the write data, a flash EEPROM for remarkably reducing the number of times of writing as compared with conventional dividing and writing for equivalently dividing the write data of the multi- bit configuration irrespective of the presence or absence of the '0' data, improving a writing speed, and simultaneously improving a using efficiency of a current capacity of a power source can be obtained.</p> |
