发明名称 |
Copper precursor composition and process for manufacture of microelectronic device structures |
摘要 |
Copper precursor formulations, including a copper precursor with at least one of (a) water, (b) a water precursor and (c) a non-ligand organic hydrate, are useful in CVD processes, e.g., in liquid delivery chemical vapor deposition, for forming a copper-containing material on a substrate. The disclosed copper precursor formulations are particularly useful in the formation of copper layers in semiconductor integrated circuits, e.g., for metallization of interconnections in such semiconductor device structures.
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申请公布号 |
US6102993(A) |
申请公布日期 |
2000.08.15 |
申请号 |
US19990365913 |
申请日期 |
1999.08.03 |
申请人 |
ADVANCED TECHNOLOGY MATERIALS, INC. |
发明人 |
BHANDARI, GAUTAM;BAUM, THOMAS H.;XU, CHONGYING |
分类号 |
C07C49/92;C07F1/00;C07F1/08;C07F7/08;C23C16/18;H01L21/28;H01L21/285;(IPC1-7):C23C16/18;C09K3/00;B05D5/12 |
主分类号 |
C07C49/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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