| 摘要 |
A planar inductance element is provided which has good high-frequency magnetic properties and which can be manufactured at high yield. The element has at least one ferromagnetic film which, whose high-frequency properties change only a little when thermal, magnetic and mechanical stresses are applied to them during the manufacture of the element. The film has high process immunity. The film has been formed by applying a stress in a plane of a ferromagnetic film having uniaxial magnetic anisotropy or forming an antiferromagnetic film on such a ferromagnetic film, and by heat-treating the resultant structure in a magnetic field, thereby inducing inplane unidirectional magnetic anisotropy in a prescribed direction. The ferromagnetic film thus formed has its high-frequency permeability improved and its high-frequency loss reduced. In forming the ferromagnetic film, the inplane unidirectional magnetic anisotropy may be induced at an angle of about 30 DEG or about 60 DEG to the longer axis of the rectangular planar inductance element. If so, the high-frequency loss of the film decreases, and the effective high-frequency permeability changes almost nil in spite of an anisotropic stress applied to the film during the manufacture of the planar inductance element.
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