| 摘要 |
PROBLEM TO BE SOLVED: To enhance device characteristics and reliability by removing the substrate material from the substrate surface on the side opposite to the element forming surface prior to hydrogen annealing process thereby making thin the substrate and removing a damage from the substrate surface on the side opposite to the element forming surface. SOLUTION: An element isolation 2 is formed on a silicon substrate 1 and a gate electrode 3 is formed on a gate insulation film 4 and then an N diffusion layer 5 is formed while being self-aligned with the element isolation 2 and the gate electrode 3. Furthermore, a silicon nitride film 6 is formed on the element isolation 2 and the gate electrode 3 and an interlayer insulation film 7 of silicon oxide is formed thereon. Prior to a process for annealing the silicon substrate 1 laminated with the interlayer insulation film 7 in a hydrogen atmosphere, substrate material is removed from the substrate surface on the side opposite to the element forming surface which is also subjected to surface treatment for removing damage therefrom. |
