| 摘要 |
PROBLEM TO BE SOLVED: To form a tantalum oxide film that cannot be easily peeled off as compared with a conventional one and at the same time cannot easily generate a leakage current. SOLUTION: A method has a first process that forms a plurality of lower electrodes 3 on a semiconductor substrate (Si substrate 1), a second process that independently forms a tantalum oxide film 5 with an amorphous state in each of the lower electrodes 3, a third process that crystallizes the tantalum oxide film 5 by heat treatment, and a fourth process that forms an upper electrode 12 on the crystallized tantalum oxide film. Then, a plurality of small capacity elements are formed, where the elements are composed of the lower electrode 3, the tantalum oxide film 5, and the upper electrode 12. |
