| 摘要 |
PROBLEM TO BE SOLVED: To enhance processing gas in utilization factor, to make an etching rate uniform, and to lessen dust attached to a semiconductor substrate by a method, wherein a gas flow is made stable always to shorten the cleaning time and dust processing time, a uniform exhaust is realized independently of processing gas, processing conditions, the structure and inner pressure of a processing chamber, and the position of an exhaust vent, and deposits are minimized in deposition area. SOLUTION: Processing gas is exhausted from a CVD(chemical vapor deposition) reactor through a pumping gap 12, where the pumping gap 12 is so structured that its part near an exhaust pump 17 that communicates with a pumping path 13 is set smaller in cross sectional area than that of its other part located on the opposite side. Or a rising port is provided to an exhaust plate that forms the one side of the pumping gap 12. Alternatively, a barrier plate is provided above an exhaust vent.
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