| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming an insulating film which makes possible further planarization during growth of the insulating film, using tetraethyl orthosilicate(TEOS) method. SOLUTION: A first plasma TEOS method is used to grow a first silicon oxide film 12, and the surface of a semiconductor substrate 10 and projected portions 11 thereon are covered. After a second plasma TEOS method using plasma generated with output lower than the high-frequency output used in this plasma TEOS method is used to grow a second silicon oxide film 13, on the first silicon oxide film 12 formed in a projection shape corresponding to the projection portions 11, unnecessary portions of the second silicon oxide film 13 are removed, and a sidewall 13a is formed on the both sides of the projected portion 12a of the first silicon oxide film by the remaining portion. An ozone TEOS method is used to make a third silicon oxide film 17 grow, to embed the sidewall 13a and the first silicone oxide film 12.
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