SUPERCRITICAL DRYING METHOD AND SYSTEM

摘要

PROBLEM TO BE SOLVED: To prevent a pattern of thin resist film tilting or swelling. SOLUTION: A pattern of thin resist film is formed on a substrate 22 by forming a thin resist film on the substrate 22, exposing it by a known lithographic method and developing it. It is then rinsed and the substrate 22 is held in a reaction chamber 21 into which a specified quantity of liquefied carbon dioxide is pressure fed from a cylinder 23 by means of a pump unit 24. Pressure of carbon dioxide in the reaction chamber 21 is controlled automatically to 7.38-8 MPa by means of a pressure control valve 26. Carbon dioxide in the reaction chamber 21 is converted into supercritical fluid and discharged therefrom thus reducing the pressure and drying the substrate 22.