CHEMICAL POLISHING METHOD OF SEMICONDUCTOR SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To provide a highly efficient chemical polishing method for semiconductor substrate in which the surface of a semiconductor substrate can be finished with extremely high smoothness using a chemical. SOLUTION: A semiconductor substrate W is mounted on the rotary plate 11 of a chemical polishing apparatus 10 and then the rotary plate 12 is turned at high speed. At the same time, chemical S is supplied from a chemical supply pipe 13 arranged in the center of the substrate W and the chemical S is fluidized relatively on the surface of the substrate W thus polishing the surface of the substrate W chemically. When the chemical S contains nitric acid and added with water or acetic acid, chemical polishing rate of becomes the reaction determining rate of the surface of the substrate W and the chemical S and surface roughening can be suppressed.