| 摘要 |
PROBLEM TO BE SOLVED: To provide an electronic apparatus possessed of a laminated film structure composed of W film/WNx barrier film/organic interlayer insulating film and a manufacturing method thereof, where the WNx barrier film is enhanced in its adhesion to the interlayer insulating film, and the W film is acceleratedly grown on the WNx barrier film. SOLUTION: A conductive film 2 which forms a lower wiring, an interlayer insulating film 3 of, for instance, polyaryl ether, and an oxide film 4 of silicon dioxide or the like are formed on a semiconductor substrate 1, a processed base 6 is provided successively with a via hole 5 which is bored in the oxide film 4 and the interlayer insulating film 3 confronting the conductive film 2, a via contact plug 11 composed of an adherent W film 7, a WNx barrier film 8, a W-nucleus formation promoting film 9, and a W-film filled into the via hole 5 is provided inside the via hole 5, and a conductive film 12 is formed on the via contact plug 11 to serve as an upper wiring.
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