| 摘要 |
PROBLEM TO BE SOLVED: To reduce substantial capacitance connections present in a front-end structure up to first metal interconnect layer including a device substrate in a semiconductor device, such as a MOSFET, etc. SOLUTION: This device has a silicon substrate 12, an isolation structure 10 present in the substrate 12 (for example, a shallow trench isolation), an active element structure (for example, a transistor structure), a dielectric layer covering the active element structure, and a metal interconnect layer (a first metal layer) 28 covering the dielectric layer 26. At least, one of dielectric consisting layers in the front-end structure is provided with a material having a permittivity of less than 3.5. This material having relatively low permittivity reduces the capacitance connections in the front-end structure. |
