发明名称 TRANSISTOR ELEMENT AND ITS MANUFACTURE, TRANSISTOR CIRCUIT, AND INTEGRATED CIRCUIT DEVICE
摘要 PROBLEM TO BE SOLVED: To prevent changes in output impedance due to manufacturing errors of a MOS transistor. SOLUTION: Source electrode 113, 114 of MOS transistors 111, 112 and power supply terminals 123, 124 are disposed separated and are connected by resistance electrodes 131, 132. The resistance electrodes 131, 132, formed in the same width as that of gate electrodes 117, 118 in the same process as the gate electrodes 117, 118, are formed and resistance values of these resistance electrodes are the same as the on-state resistances of the MOS transistors 111, 112. The increase or decrease in width due to manufacturing errors is generated similarly in the gate electrodes 117, 118 and in the resistance electrodes 131, 132 equally to cause the changes in width to cancel and make effects on the output impedance offset.
申请公布号 JP2000223585(A) 申请公布日期 2000.08.11
申请号 JP19990023903 申请日期 1999.02.01
申请人 NEC IC MICROCOMPUT SYST LTD 发明人 ONO TAKASHI
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L21/8238;H01L27/06;H01L27/092;H01L29/43;H01L29/78;(IPC1-7):H01L21/823;H01L21/823 主分类号 H01L27/04
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