| 摘要 |
PROBLEM TO BE SOLVED: To realize wafer scale chip size package even for a three terminal element by making a trench and leading out the rear side terminal to the surface side. SOLUTION: A bipolar transistor is fabricated by forming the base and emitter on the lightly doped layer 12 side of a semiconductor wafer having a heavily doped layer 11 and the lightly doped layer 12. A trench 18 reaching the heavily doped layer 11 is made at a position surrounding the base and lead out to the surface side through a lead-out electrode 21. Surface side of the semiconductor wafer is coated with a resin layer 23 and a third electrode layer 22 for the base, emitter and collector is exposed on the surface of the resin layer 23. Finally, the semiconductor wafer 24 diced together with the resin layer 23 to obtain individual semiconductor devices. |
