| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain the reliability the same as or higher than that of a MOSFET by forming a first and a second NFET having a second impurity region of a different length on one and the same substrate. SOLUTION: On one and the same substrate, the length of a second impurity region and/or a third impurity region is differentiated to be optimized for each circuit of different operating voltage. Consequently, a circuit requiring a high speed performance can be formed as to have an operating speed suitable for the requirement and a circuit requiring a good withstanding characteristic can be formed as to have a withstanding characteristic suitable for the requirement. By properly disposing NTFTs having a structure suitable for a type of a circuit, the best performance can be brought out in a circuit and a semiconductor circuit having a high reliability and a high operating performance can be obtained, With an electric apparatus mounted with such an electric optical device or semiconductor circuit as a component, the performance and the reliability can be increased.</p> |
