| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device including a MOS gate having low on-voltage. SOLUTION: A MOS thyristor 100 comprises a p+ type anode layer (first semiconductor layer) 10, an n- type base region (second semiconductor layer) 14, a p+ type base region (third semiconductor layer) 16, and an n+ type impurity diffused layer (fourth semiconductor layer) 18 functioning as a source region. An n+ type floating emitter region (sixth semiconductor layer) 22 is formed on the surface part of the base region 16 and a first channel region (fifth semiconductor layer) 20a is formed between the impurity diffused layer 18 and the floating emitter region 22. A buried insulation layer 70 is formed at the lower end part of the impurity diffused layer 18, the first channel region 20a and the first n+ type floating emitter region 22a. A trench gate 34 is formed along a current passage at least in the first channel region 20a.
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