| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element in which the polarization of light radiated to a direction perpendicular to a lamination face is decided uniquely in the semiconductor light emitting element, in which a composite structure by a multilayer film lamination structure and by an active layer containing a quantum well are provided on a semiconductor substrate. SOLUTION: In a surface emitting laser, a quantum well 4 and a quantum wire layer 8 which is formed in a [011] orientation are situated between an Si-doped n-type GaAs/AlAs distributed Bragg reflector 3 and a Be-doped p-type GaAs/AlAs distributed Bragg reflector 9. When a resonance wavelength is set at 9.80 nm, a large gain in the [011] orientation from the quantum wire layer exists in addition to a gain from the quantum well, and the polarization of oscillation light is decided uniquely in the [011] orientation. Even when a quantum dot having an anisotropic shape inside plane is used instead of the quantum wire layer, the polarization of the oscillation light can be decided together with the gain from the quantum well. Consequently, the polarization of the surface emitting laser can be controlled even by using an element structure of a plane orientation in which an anisotropic optical characteristic does exist inside the plane.
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