| 摘要 |
<p>An improved word line boost circuit (100) suitable for use on integrated circuits such as flash memory devices includes a two-step boosting circuit with a floating circuit node. A first circuit (300) provides an initial boost of the output voltage from a precharged voltage. Part of the first circuit is floated, lessening a load on a second circuit. Then, the second circuit (400) provides a second boost of the output voltage with increased power efficiency. A time delay separates the onset of the second boosting operation from the onset of the first boosting operation so as to define a two-step boost.</p> |
