| 摘要 |
A lower electrode (4), a dielectric layer (5) made of a ferroelectric materi al or a high dielectric constant material, and an upper electrode (6) are forme d in order on an insulating film (2). The dielectric layer (5) overlaps the lower electrode (4). Between the overlapping portion of the dielectric layer (5) and the insulating film (2), an insulation barrier layer (3) made of two or more complex metal oxides containing Si or silicon nitride compounds is interposed. In another mode, a plug for contact is provided in an insulating film, and an adherence layer is provided between the plug and the lower electrode. An insulation barrier layer made of an oxide which is the same material forming the adherence layer is provided between the dielectric laye r and the insulating film. As a result, Ti and Pb, which are constituent elements of the ferroelectric material or high dielectric constant material do not diffuse into and enter an SiO2 film and a semiconductor layer, enabling easy formation of a barrier layer.
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