发明名称 SYMBOL-FORMING METHOD ON SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To form an element isolation layer in a trench formed in a substrate by a method, wherein while the display region of a symbol is protected, an embedded insulating film is formed in the interior of a groove formed in the substrate. SOLUTION: A symbol-forming method on a substrate is provided with a process wherein recesses and projections are formed in and on the substrate 11 and a symbol M is formed on the substrate 11, a process for coating the display region 11A of the symbol with a polishing stopper film 12, and a process for polishing the substrate 11. The symbol-forming method on the substrate is provided with a process for forming a groove for isolating an active region in the substrate 11, a process for forming an embedded insulating film 14 in the interior of the groove, and a process for removing the film 14 deposited on the film 12 coating the display region 11A of the symbol between the process for coating the display region 11A of the symbol with the film 12 and the process for polishing the substrate 11.
申请公布号 JP2000223381(A) 申请公布日期 2000.08.11
申请号 JP19990020987 申请日期 1999.01.29
申请人 SONY CORP 发明人 YAMAZAKI TAKESHI
分类号 H01L21/02;(IPC1-7):H01L21/02 主分类号 H01L21/02
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