发明名称 |
MOS transistor is designed such that resistance in the ON state is identical to that in specific electrode connecting supply voltage to source electrode, resulting in constant output impedance, despite manufacturing defects |
摘要 |
The transistor (111) has an ON-state resistance. Its specific electrode (131) connects the source electrode (113) to a supply voltage section (123). This is supplied with a voltage or energy. Its resistance is identical to the ON-state resistance, and its width is identical to a width of the gate electrode (117). The specific electrode (131) and the gate electrode (117) are formed simultaneously. An independent claim is included for the method of manufacture.
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申请公布号 |
DE10004200(A1) |
申请公布日期 |
2000.08.10 |
申请号 |
DE20001004200 |
申请日期 |
2000.02.01 |
申请人 |
NEC CORP., TOKIO/TOKYO |
发明人 |
OHNO, TSUYOSHI |
分类号 |
H01L27/04;H01L21/822;H01L21/8234;H01L21/8238;H01L27/06;H01L27/092;H01L29/43;H01L29/78;(IPC1-7):H01L29/78;H01L21/336 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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