发明名称 |
METHOD AND APPARATUS FOR DEPOSITION OF DIAMOND-LIKE CARBON COATINGS FROM A HALL-CURRENT ION SOURCE |
摘要 |
A direct ion beam deposition method and apparatus are disclosed in which a substrate (120) is disposed within a vacuum chamber (110), a coating of DLC or Si-DLC at a high deposition rate using a Hall-Current ion source (100) is deposited on the substrate, the Hall-Current ion source is operating on carbon-containing or carbon-containing and silicon-containing precursor gases, respectively, and has an anode discharge region (70) which is insulatively sealed to prevent discharge from migrating into the interior of the ion source.
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申请公布号 |
WO0047023(A1) |
申请公布日期 |
2000.08.10 |
申请号 |
WO2000US03004 |
申请日期 |
2000.02.02 |
申请人 |
DIAMONEX, INCORPORATED |
发明人 |
MAHONEY, LEONARD, JOSEPH;BROWN, DAVID, WARD;PETRMICHL, RUDOLPH, HUGO |
分类号 |
H05H1/24;C23C14/06;C23C14/32;C23C14/48;C23C16/26;C23C16/40;C23C16/48;G11B5/84;H01J37/32;H01L21/203;H01L21/265;H01L21/302;H05H1/46;(IPC1-7):H05H1/24;H01J7/24 |
主分类号 |
H05H1/24 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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