| 摘要 |
The IGBT comprises a drift layer (1) of first conductivitiy, through zones (2) of second conductivity of surface region of drift layer, emitter zones (3) of first conductivity in trough zones, trenches (7) from emitter zones to drift layer, and gate electrode (10) in each trench buried in it with an intermediate gate insulating film. An emitter electrode is in contact with both emitter and trough zones, and a collector layer of second conductivity with a collector electrode (12) is deposited at the rear of drift layer. The trough zones are selectively structured, and the drift zone has sections extending between the trough zones.
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