METHOD FOR INTRAVASCULAR RADIATION THERAPY

摘要

An intravascular device such as a stent is placed in a plasma source ion implantation (PSII) chamber wherein a plasma of radioactive ions is introduced to surround the device. A negative potential is applied to the stent to accelerate the ions towards the device and implant them into the surface of the device, thereby rendering the device radioactive. The stent is next deployed intravascularly within a patient's body to maintain the patency of a blood vessel and irradiate the surrounding tissue to prevent the development of restenosis.