Multilevel metal wiring used in semiconductor chip production is improved in quality by carrying out an integrated annealing or tempering step at the start of inter-level dielectric deposition

摘要

Method for improving multilevel metal wiring quality involves carrying out an integrated annealing or tempering step at the start of inter-level dielectric deposition. Preferred Features: The wafer may be preheated to the annealing temperature in a first stage of inter-level dielectric deposition or inter-level dielectric deposition is carried out after annealing and cooling the wafer.