发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
摘要 |
<p>A semiconductor substrate has a first main surface with a plurality of trenches 5a sandwiching a region in which p and n diffusions regions 2 and 3 are formed to provide a p-n junction along the depth of the trenches. P diffusion region 2 has a doping concentration profile provided by a p dopant diffused from a sidewall surface of one trench 5a, and n diffusion region 3 has a doping concentration profile provided by an n dopant diffused from a sidewall surface of the other trench 5a. A heavily doped n<+> substrate region 1 is provided at a second main surface side of p and n diffusion regions 2 and 3. A depth Ld of trench 5a from the first main surface is greater than a depth Nd of p and n diffusion regions 2, 3 from the first main surface by at least a diffusion length L of the p dopant in p diffusion region 2 or the n dopant in n diffusion region 3 in manufacturing the semiconductor device. A high withstand voltage and low ON-resistance semiconductor device can thus be obtained. <IMAGE></p> |
申请公布号 |
EP1026749(A1) |
申请公布日期 |
2000.08.09 |
申请号 |
EP19980933904 |
申请日期 |
1998.07.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
NITTA, TETSUYA;MINATO, TADAHARU;UENISI, AKIO |
分类号 |
H01L21/265;H01L21/336;H01L29/06;H01L29/423;H01L29/78;H01L29/861;H01L29/872;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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