Method for producing a memory device

摘要

A memory device includes a multiplicity of memory cells disposed on a substrate for at least intermittent stable storage of at least two different information states. A writing device is associated with the memory cells for selectively putting one of the multiplicity of memory cells into a predetermined information state by external action. A reading device is associated with the memory cells for external detection of a current or chronologically preceding information state of a selected memory cell. The memory cells have a miniaturized mechanical element. The production of such a memory device is performed with the following steps: full-surface application of a first insulator layer onto a main surface of a substrate; full-surface application of a diaphragm layer being formed of an electrically conductive material onto the first insulator layer; structuring of the diaphragm layer in such a way that first conductor tracks are formed, which have enlargements at points of the memory cells; isotropic etching of the first insulator layer, using the structured diaphragm layer as an etching mask, until such time as a sharp point remains behind in the middle, immediately beneath the enlargement; and removal of all of the material of the fist insulator layer on the underside of the enlargement, thus forming a diaphragm.