发明名称 |
Contact process using Y-contact etching |
摘要 |
A method is disclosed for forming Y-shaped holes in semiconductor substrates by using Y-contact etching. The hole is formed with a single, two-step dry-etching process in a single chamber with one masking step for the whole hole. The upper portion of the Y-shaped hole is formed by means of an isotropic tapered dry-etching process while the lower portion is formed by means of a straight anisotropic recipe of the same dry-etching process. The result is a Y-shaped hole formed with fewer process steps and with maximized contact area for improved reliability.
|
申请公布号 |
US6100577(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19990377542 |
申请日期 |
1999.08.19 |
申请人 |
VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
LINLIU, KUNG |
分类号 |
H01L21/311;H01L21/768;(IPC1-7):H01L39/00 |
主分类号 |
H01L21/311 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|