| 摘要 |
PCT No. PCT/US96/16317 Sec. 371 Date May 12, 1997 Sec. 102(e) Date May 12, 1997 PCT Filed Oct. 10, 1996 PCT Pub. No. WO98/16010 PCT Pub. Date Apr. 16, 1998An improved charge pump design is disclosed. This charge pump comprises at least one pumping transistor having a triple well arrangement. This triple pump transistor has a source and a drain region of a first conductive type formed on a first well having an opposite conductive type. A second well having the first conductive type is formed outside of the first well. The source region, first well and second well are set to substantially the same potential. One aspect of this configuration is that the first well forms a semiconductor diode with the drain region. Another aspect of this arrangement is that the body effect of the transistor is reduced. The reduction in body effect reduces the threshold voltage of the transistor. It is found that the above mentioned diode and threshold voltage reduction, singly and in combination, allow the charge pump to operate more efficiently.
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