Sputtering process for the conformal deposition of a metallization or insulating layer
摘要
The present invention is a method related to the deposition of a metallization layer in a trench in a semiconductor substrate. The focus of the invention is to sequentially perform heated deposition and etch unit processes to provide a good conformal film of metal on the inner surfaces of a via or trench. The deposition and etch steps can also be performed simultaneously.
申请公布号
US6100200(A)
申请公布日期
2000.08.08
申请号
US19980218563
申请日期
1998.12.21
申请人
ADVANCED TECHNOLOGY MATERIALS, INC.
发明人
VAN BUSKIRK, PETER C.;RUSSELL, MICHAEL W.;VESTYCK, DANIEL J.;SUMMERFELT, SCOTT R.;MOISE, THEODORE S.;CELII FRANCIS G