| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of cracks in the target in the process of high output sputtering by allowing it to have a structure in which the pulverized powder of silicon dioxide in which specific surface area lies in a specified range is uniformly dispersed into the base of zinc calcogenide. SOLUTION: This sputtering target has a structure in which the pulverized powder of silicon dioxide having >5 to 10 m2/g specific surface area is uniformly dispersed into the base of zinc calcogenide. In the case this specific surface area is <=5 m2/g, its degree of sintering is deteriorated, the relative density is not increased, and micropores are generated to reduce its bending strength, by which a large target can not be produced. In the case the specific surface area exceeds 10 m2/g, not only the dispersibility of the pulverized powder of silicon dioxide is made ununiform, but also this powder plays the role as a bridge of microcracks generated in the process of sputtering to cause cracks in the target in the process of high output sputtering. |
