发明名称 |
Silicon carbide barrier layers for porous low dielectric constant materials |
摘要 |
Interconnects in porous dielectric materials are coated with a SiC-containing material to inhibit moisture penetration and retention within the dielectric material. Specifically, SiC coatings doped with boron such as SiC(BN) show particularly good results as barrier layers for dielectric interconnects.
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申请公布号 |
US6100587(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19990383753 |
申请日期 |
1999.08.26 |
申请人 |
LUCENT TECHNOLOGIES INC. |
发明人 |
MERCHANT, SAILESH MANSINH;MISRA, SUDHANSHU;ROY, PRADIP KUMAR |
分类号 |
H01L21/768;(IPC1-7):H07L23/485;H01L21/476 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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