发明名称 |
Method for forming a horizontal surface spacer and devices formed thereby |
摘要 |
The present invention provides a method for forming self-aligned spacers on the horizontal surfaces while removing spacer material from the vertical surfaces. The preferred method uses a resist that can be made insoluble to developer by the use of an implant. By conformally depositing the resist over a substrate having both vertical and horizontal surfaces, implanting the resist, and developing the resist, the resist is removed from the vertical surfaces while remaining on the horizontal surfaces. Thus, a self-aligned spacer is formed on the horizontal surfaces while the spacer material is removed from the vertical surfaces. This horizontal-surface spacer can then be used in further fabrication. The preferred method can be used in many different processes where there is exists a need to differentially process the vertical and horizontal surfaces of a substrate.
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申请公布号 |
US6100172(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19980182173 |
申请日期 |
1998.10.29 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
FURUKAWA, TOSHIHARU;HAKEY, MARK C.;HOLMES, STEVEN J.;HORAK, DAVID V.;RABIDOUX, PAUL A. |
分类号 |
H01L21/033;H01L21/308;H01L21/336;H01L21/768;H01L21/822;H01L29/78;(IPC1-7):H01L21/22;H01L21/823;H01L21/425 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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