发明名称 Method for forming a horizontal surface spacer and devices formed thereby
摘要 The present invention provides a method for forming self-aligned spacers on the horizontal surfaces while removing spacer material from the vertical surfaces. The preferred method uses a resist that can be made insoluble to developer by the use of an implant. By conformally depositing the resist over a substrate having both vertical and horizontal surfaces, implanting the resist, and developing the resist, the resist is removed from the vertical surfaces while remaining on the horizontal surfaces. Thus, a self-aligned spacer is formed on the horizontal surfaces while the spacer material is removed from the vertical surfaces. This horizontal-surface spacer can then be used in further fabrication. The preferred method can be used in many different processes where there is exists a need to differentially process the vertical and horizontal surfaces of a substrate.
申请公布号 US6100172(A) 申请公布日期 2000.08.08
申请号 US19980182173 申请日期 1998.10.29
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 FURUKAWA, TOSHIHARU;HAKEY, MARK C.;HOLMES, STEVEN J.;HORAK, DAVID V.;RABIDOUX, PAUL A.
分类号 H01L21/033;H01L21/308;H01L21/336;H01L21/768;H01L21/822;H01L29/78;(IPC1-7):H01L21/22;H01L21/823;H01L21/425 主分类号 H01L21/033
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