| 摘要 |
Integrated circuitry and a method of forming a contact landing pad are described. The method includes, in one embodiment, providing a substrate having a plurality of components which are disposed in spaced relation to one another; forming a silicon plug spanning between two adjacent components; forming a refractory metal layer over the silicon plug and at least one of the components; reacting the silicon plug and the refractory metal layer to form a silicide layer on the silicon plug; and after forming the silicide layer removing unreacted refractory metal layer material from the substrate.
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