发明名称 Etching system
摘要 A small, light-weight and highly maintainable etching system and an etching method for etching a large substrate with a homogeneous etching rate are provided. The etching system comprises an agitating electric field system disposed around the substrate, an agitating power source of high frequency, medium frequency or low frequency, agitating electrodes, amplifiers and a phase controller to agitate electrons or ions to increase the etching speed and the uniformity of the etching rate by promoting activation of reactive gas and uniformalizing a plasma density.
申请公布号 US6099687(A) 申请公布日期 2000.08.08
申请号 US19960688019 申请日期 1996.07.29
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 YAMAZAKI, SHUNPEI
分类号 H05H1/46;C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):C23F1/02;C23C16/00 主分类号 H05H1/46
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