| 摘要 |
In a fully depleted SOI device having a back gate structure, the channel region of the device is formed of an intrinsic or pseudo-intrinsic semiconductor. This has the effect of reducing an unbiased threshold of the device, as well as substantially reducing threshold variations normally associated with variations in dopant concentrations, while providing a means to electrically tune the threshold voltage by adjusting a potential applied to the back gate structure.
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