Method for forming metal interconnection of semiconductor device

摘要

A method for forming metal interconnection of semiconductor device is disclosed. In the present invention, an aluminum layer in the 10 to 100 ANGSTROM range is deposited on the bottom of the contact before or after the deposition of a titanium layer for barrier metal, which forms TiAl3 by the reaction of titanium and aluminum. According to the invention, stable contact resistance and low leakage current can be obtained in the application of ultra shallow junction.