| 发明名称 |
Chamber etching of plasma processing apparatus |
| 摘要 |
A plasma processing apparatus and method in which a counter electrode is connected to a high frequency power source to generate a plasma and the substrate electrode is grounded and in which the substrate electrode is connected to a high frequency power source and the counter electrode is grounded to perform chamber etching.
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| 申请公布号 |
US6099747(A) |
申请公布日期 |
2000.08.08 |
| 申请号 |
US19980166424 |
申请日期 |
1998.10.05 |
| 申请人 |
NEC CORPORATION |
发明人 |
USAMI, TATSUYA |
| 分类号 |
H05H1/46;C23C16/40;C23C16/44;C23C16/50;C23C16/511;H01J37/32;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):B05D3/14 |
主分类号 |
H05H1/46 |
| 代理机构 |
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