InP-based HEMT with superlattice carrier supply layer

摘要

A semiconductor device includes a semi-insulating substrate. A channel layer is formed on the semi-insulating substrate. An electron supply layer is formed on the semi-insulating substrate for generating a two-dimensional electron gas. The electron supply layer includes a doped superlattice layer. The superlattice layer includes layers of InXAl1-XAs and layers of InYAl1-YAs which alternate with each other, where 0