发明名称 |
Method of in-line monitoring for shallow pit on semiconductor substrate |
摘要 |
A method of in-line monitoring for shallow pits formed on a semiconductor substrate using an electron beam. The electron beam is scanned across exposed pads on the semiconductor substrate and relative concentrations of secondary electrodes are examined to identify shallow pits.
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申请公布号 |
US6100102(A) |
申请公布日期 |
2000.08.08 |
申请号 |
US19990265840 |
申请日期 |
1999.03.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, YANG-HYONG;HWANG, CHUN-HA;KANG, HYO-CHEON;KIM, DEOK-YONG |
分类号 |
H01L21/76;G01R31/307;H01L21/66;(IPC1-7):G01R31/26 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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