发明名称 Photoresist film and method for forming pattern thereof
摘要 A photoresist includes a three-layer structure of a lower layer, a middle layer and an upper layer, wherein the lower and upper layers are photoresist layers, the lower layer is sensitive to a light having a longer wavelength than a light to which the upper layer is sensitive, and the middle layer is a light-shielding film formed of an organic substance that has a transmittance such that the lower layer is not exposed to lights to which the lower and upper layers are sensitive.
申请公布号 US6100010(A) 申请公布日期 2000.08.08
申请号 US19990255757 申请日期 1999.02.23
申请人 SHARP KABUSHIKI KAISHA 发明人 INA, KATSUYOSHI
分类号 G03F7/26;G03F7/095;G03F7/11;H01L21/027;(IPC1-7):G03F7/26 主分类号 G03F7/26
代理机构 代理人
主权项
地址