| 摘要 |
A microwave plasma CVD apparatus for forming a film with a suitable thickness uniformly and reliably on even a long substrate placed on a substrate support, comprising a laterally long vacuum enclosure (10), a laterally long substrate support (12) provided in the vacuum enclosure (10) and adapted to support the substrate (11), electrodes (14) arranged at longitudinal intervals above the substrate support (12) and constituting the essential part of plasma generating means, microwave waveguides (20) arranged along at least one outside side of the vacuum enclosure (10) and connected to the electrodes (14) corresponding to the dielectric windows (13) provided at the respective ends of the microwave waveguide (20), gas supply means (15) for supplying a material gas into the vacuum enclosure (10), and an evacuating means (16) for exhausting the gas in the vacuum enclosure (10). |
